University at Buffalo 3 credits Electrical Engineering
Biasing and active loads in bipolar junction transistor (BJT) and field-effect transistor (FET) integrated circuits; current sources; differential and multistage amplifiers; frequency response of single and multiple transistor amplifier circuits; digital circuits with an emphasis on complementary metal-oxide-semiconductor (CMOS) technology. Pre Requisite: EE 310; Electrical Engineering or Engineering Physics Majors or Electrical Engineering Minors Only. EE Faculty Advising is required for EE and EGP majors.
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