Nanoscale Device Physics and Technologies

Course Description

Examine physical principles and operational characteristics of semiconductor devices. Explore the physics of metal-oxide-semiconductor field-effect transistors (MOSFET) and bipolar junction transistors (BJT). Discuss short-channel effects, ultra-thin oxide, and high-K gate dielectrics; semiconductor interface characterization; hot-electron effects; lightly-doped drain devices (LDD); subthreshold characteristics; complementary-symmetry metal-oxide- semiconductor (CMOS) latchup; gate-induced leakage current of MOSFETs; poly-depletion and quantum mechanical effects; silicon on insulator (SOI) devices; strained-Si; advanced 3-D devices and bandgap narrowing effect; Webster effect; Kirk effect; punchthrough and avalanche breakdown; base transit time for bipolar transistors; and scaling issues of both BJT and MOSFETs. Electrical and Computer Engineering 396K (Topic 21) and Electrical Engineering 396K (Topic 21) may not both be counted. Pre/Corequisites: Knowledge in solid-state electronic devices.

Code

ECE 396K.21

Credits

3

Subject

Electrical and Computer Engineering